Vertical GaN PiN Diode

Proton-Irradiation Hard

Maintains reverse blocking above 1.7 kV after proton irradiation, suitable for harsh radiation environments.

Xie, Xuan · Yu, Shunjie · Tang, Xi · Chen, Rui · Xu, Guangwei · Shibing, Long · Yang, Shu

IEEE Electron Device Letters 2024

Specifications

质子辐照后反向阻断电压高于
{'zh': '1.7', 'en': ''} kV