Etched surface roughness ≈0.9 nm, resist-free, works on irregular surfaces
Using a focused helium ion beam to disrupt the crystal lattice, this method achieves high-resolution, resist-free wet etching of SiC, enabling nanofabrication on irregular surfaces and suspended structures without spin-coating and development.
Wen, Xiaolei · Zhang, Lansheng · Wang, Xiuxia · Chen, Lin · Sun, Jian · Hu, Huan
Small Methods 2024
Sub-nanometer focused helium ion beam spot
No need for resist spin-coating and development
One-step fabrication of suspended nanobeam structures