Dual-Gated Black Phosphorus Photo-Tunneling Transistor

Threshold power reduced by an order

By breaking the surface potential saturation through tunneling injection, it enables photocurrent generation from ultra-weak infrared light, making sensitivity no longer limited by specific detectivity.

Wang, Junzhuan · Gan, Xuetao · Wang, Xiaomu

Nature Communications 2025

Specifications

Subthreshold swing

{'zh': '约50', 'en': '~50'} mV/dec

mid-wave infrared power

{'zh': '约35', 'en': '~35'} pW

弱光探测能力提升

{'zh': '约30', 'en': ''} 倍

Advantages

Threshold power reduced by over an order of magnitude compared to conventional phototransistors