Conductive Polishing Pad

0.33 nm Ultra-smooth

This conductive polishing pad enables ultra-smooth SiC wafer surfaces in electro-discharge assisted polishing while maintaining a high material removal rate.

Luo, Qiufa · Xinkai, Lv · Weitao, Wang · Lu, Jing · Wang, Ningchang · Ke, Congming · Jiang, Feng · Huang, Hui

Wear 2026

Specifications

Surface roughness

{'zh': '0.33', 'en': '0.33'} nm

Material removal rate

{'zh': '0.93', 'en': '0.93'} μm/h

Resistivity

{'zh': '10⁻³', 'en': '10⁻³'} Ω m

Hardness

{'zh': '12.3', 'en': '12.3'} HV

Compressive strength

{'zh': '8.35', 'en': '8.35'} MPa

Advantages

Ultra-smooth surface

By regulating the discharge current, surface roughness as low as 0.33 nm was achieved, meeting ultra-precision machining requirements.

High material removal rate

A material removal rate of 0.93 μm/h was achieved while maintaining an ultra-smooth surface, balancing efficiency and quality.

Adjustable discharge current

The machining outcome can be controlled by adjusting the discharge current, making process parameters flexible and easy to tune.

Avoids severe damage

In the cathode configuration, only mild oxidation is induced, avoiding the severe surface damage seen in the anode configuration.

Applications

• SiC wafer processing：Directly obtain ultra-smooth SiC wafer surfaces, replacing multi-step rough and fine polishing.
• Semiconductor substrate polishing：Achieve efficient polishing of semiconductor substrates with reduced damage compared to conventional mechanical polishing.
• Ultra-precision polishing：0.33 nm roughness meets ultra-precision surface requirements without subsurface damage.
• Ceramic surface finishing：Suitable for surface finishing of hard and brittle ceramics like SiC, avoiding brittle fracture damage.