DRIE-Etched Silicon Wafer

112 μm deep for 5 μm trench

Optimized C4F8 passivation-to-etch ratio achieves a 112.2 μm deep, 5 μm wide trench with only 0.279 μm aperture variation, enabling precise fabrication of high-aspect-ratio silicon structures.

Wang, Dandan · Lei, Cheng · Pengfei, Ji · Li, Zhiqiang · Yu, Jiangang · Liang, Ting · Yao, Zong

Micromachines 2025

Specifications

宽沟槽刻蚀深度

{'zh': '112.2', 'en': ''} μm

整体孔径尺寸差

{'zh': '0.279', 'en': ''} μm

Advantages

etch depth growth bottleneck overcome by incremental bottom RF power