Multilayer PdSe₂ Field-Effect Transistor

Withstands 5× MoS₂ current density

First demonstration of multilayer PdSe₂ FETs with breakdown current density five times higher than MoS₂, identifying interfacial thermal resistance as a key performance limiter.

Jiaqiu, Xie · Ze-Hao, Yu · Yuanchen, Sun · Gan, Qikang · Liu, Chenhan · Wang, Lei · Zhang, Lifa · Zhao, Yunshan

Advanced Materials 2025

Specifications

Max current density

{'zh': '', 'en': '2.74'} MA cm⁻²

Thermal boundary conductance

{'zh': '', 'en': '13'} MW m⁻²