p-GaN Gate HEMT

Stable leakage after irradiation

This transistor maintains trap-assisted tunneling as its gate leakage mechanism under reverse bias after gamma irradiation, indicating good tolerance to radiation environments, suitable for power electronics in radiation-prone settings.

Danmei, Lin · Zheng, Xuefeng · Yue, Shaozhong · Wang, Xiaohu · Hao, Zhang · Rui, Han · Zhu, Tian · Lv, Ling · Wang, Yingzhe · Tan, Wang · Ma, Xiaohua · 74227950

Applied Physics Letters 2025

Specifications

Trap energy level

{'zh': '0.93', 'en': '0.93'} eV

Breakdown voltage

{'zh': '650', 'en': '650'} V

Gate stress bias

{'zh': '7', 'en': '7'} V

Advantages

Stable reverse leakage mechanism

Under reverse bias, the leakage mechanism remains trap-assisted tunneling before and after irradiation, indicating that irradiation does not introduce new reverse leakage paths.

Clear forward leakage mechanism change

Under forward bias, the dominant conduction mechanism shifts from Poole-Frenkel emission to TAT after irradiation, attributed to irradiation-induced hole traps at EV+0.93 eV.

Applications

• Radiation-hard power electronics：Provide gate leakage mechanism data under irradiation for radiation-hard design.
• Spacecraft power systems：Assess space radiation effects on GaN power device gate reliability.
• High-voltage device reliability testing：Analyze leakage degradation and trap behavior of high-voltage devices after irradiation.