Stacked Si Nanowire Channels

Diameter 20 ± 2 nm

Embedded-precursor-feeding yields horizontally stacked Si nanowire arrays with uniform 20 nm diameter and >90% growth yield, enabling reliable channels for monolithic 3D integrated transistors.

Liang, Lei · Qian, Wentao · Lei, Yan · Mingyu, Xie · Wei, Liao · Wang, Junzhuan · Yu, Linwei

ACS Nano 2025

Specifications

Diameter

{'zh': '', 'en': '2'} nm

Growth yield

{'zh': '>90', 'en': '>90'} %

Subthreshold swing

{'zh': '~160', 'en': '~160'} mV/dec

Advantages

On/off current ratio ~10^8