Dynamic Gate Capacitance GaN HEMT

Accurate switching transient modeling

Proposes a dynamic gate capacitance model that accounts for both VDS and VGS dependencies, significantly improving switching transient analysis accuracy and overcoming discrepancies caused by underestimated Miller effect in conventional static models.

Jiahong, Du · 75397257 · Qiuyi, Tang · Bomin, Jiang · Dong, Zezheng · Wu, Xinke · Yang, Shu

IEEE Transactions on Power Electronics 2024

Advantages

Improved switching transient analysis accuracy

Validated against CG measurements with varying VDS and VGS