Epitaxial single-crystal GaN on AlN nucleation layer

RMS roughness of 0.272 nm

GaN epitaxial layer grown on AlN nucleation layer prepared by plasma-enhanced atomic layer deposition achieves improved crystal quality and surface smoothness, with a simple and low-cost process suitable for high-performance electronic devices.

Lu, Hao · Xu, Shengrui · Yong, Huang · Chen, Xing · Shuang, Xu · Xu, Liu · Xinhao, Wang · Gao, Yuan · Zhang, Yachao · Duan, Xiaoling · Zhang, Jincheng · Hao, Yue

Wuji Cailiao Xuebao/Journal of Inorganic Materials 2024

Specifications

沉积速率

{'zh': '0.1', 'en': ''} nm/cycle

外延层表面粗糙度均方根

{'zh': '0.272', 'en': ''} nm

厚度

{'zh': '20.8', 'en': ''} nm