Conjugated Radical Polymers
Room-Temperature Quantum Coherence
Stable conjugated polyradicals directly copolymerized from diradical monomers exhibit balanced ambipolar transport and room-temperature quantum coherence, offering processable macromolecular materials for spintronic and quantum information devices.
Liu, Hao · Li, Wenhao · Yi, Yang · Zhang, Zihong · Zhao, Yan · Yang, Kun · Zeng, Zebing
Angewandte Chemie - International Edition 2025
Specifications
- Hole Mobility
- {'zh': '0.41', 'en': '0.41'} cm2 V-1 s-1
- Electron Mobility
- {'zh': '0.38', 'en': '0.38'} cm2 V-1 s-1
- Longitudinal Quantum Coherence Time (T1)
- {'zh': '1.88', 'en': '1.88'} μs
- Maximum Diradical Character
- {'zh': '0.88', 'en': '0.88'}
Advantages
Facile Synthesis
Direct copolymerization of diradical monomers with DPP units affords stable conjugated polyradicals without complex post-functionalization.
Room-Temperature Quantum Coherence
Thin films exhibit attractive room-temperature quantum coherence times (T1 = 1.88 μs, T2 = 218 ns), promising for quantum information processing.
Balanced Ambipolar Transport
Well-balanced hole/electron mobilities (0.41/0.38 cm² V⁻¹ s⁻¹) enable high-performance ambipolar field-effect transistors.
NIR Absorption Beyond 1000 nm
Intense near-infrared absorptions beyond 1000 nm extend their potential to NIR optoelectronics and bioimaging.
Applications
- Spintronics：Provides polymers with stable spin-delocalized structures for direct fabrication of spin valves, magnetoresistive devices, etc.
- Quantum Information Devices：Room-temperature long quantum coherence times make them candidate materials for qubits in quantum information processing and storage.
- Near-Infrared Optoelectronics：Strong NIR absorption (>1000 nm) can replace traditional narrow-bandgap materials in infrared photodetectors, solar cells, etc.
- Conducting Polymers：Combining processability of conducting polymers with radical spin properties, providing a new strategy for functional conducting polymers.
- Ambipolar Organic Field-Effect Transistors：Balanced high hole/electron mobilities (0.41/0.38 cm² V⁻¹ s⁻¹) allow direct use as active layer in ambipolar OFETs.