Ga2O3 Schottky Barrier Diode

Higher breakdown under proton radiation

After 2×10¹³ cm⁻² proton irradiation, breakdown voltage increases by nearly 350 V, while on-state current density decreases by 57%, suitable for high-voltage devices in radiation environments.

Yue, Shaozhong · Zheng, Xuefeng · Zhang, Fang · Hong, Yue Hua · Wang, Yingzhe · Zhu, Tian · Sunyan, Gong · Wang, Xiaohu · Lv, Ling · Cao, Yanrong · Zhang, Weidong · Zhang, J. F. · Ma, Xiaohua · 74227950

IEEE Transactions on Electron Devices 2024

Specifications

质子辐射后导通电流密度降低

{'zh': '57', 'en': ''} %

击穿电压提升

{'zh': '350', 'en': ''} V

浓度从

{'zh': '4.1×10¹³', 'en': ''} cm⁻³

Advantages

OFF-state current density reduced by more than one order of magnitude