InGaAsP Graded-Bandgap Photodiode

Broadband high-speed 850–1550 nm

By replacing the conventional InP window layer with InAlAs and the absorber with InGaAs, and introducing InGaAsP graded bandgap layers, this photodiode extends detection to 850 nm while maintaining high-speed response and low absorption loss across a broad spectral range.

Liu, Tianhong · Li, Jinping · Chen, Baile · Tong, Cunzhu

Sensors 2025

Specifications

光敏面下带宽

{'zh': '20', 'en': ''} GHz

光敏面下带宽

{'zh': '15', 'en': ''} GHz

光敏面下带宽

{'zh': '15.5', 'en': ''} GHz

响应度

{'zh': '0.5', 'en': ''} A/W

响应度

{'zh': '0.72', 'en': ''} A/W

响应度

{'zh': '0.64', 'en': ''} A/W