Surface-Activated Bonded Si/SiC Interface

Near-Zero Residual Stress

Surface-activated bonding enables tunable interfacial structure and low thermal boundary resistance, with residual stress an order of magnitude lower than hydrophilic bonding, facilitating reliable heat dissipation under high thermal loads.

He, Yang · Wan, Shun · Zhou, Shi · Zeming, Huang · Chang, Yongwei · Yang, Yu · Gao, Xiaowu · Xu, Yongze · Yang, J. · Shang, Gao · Ma, Dengke · Zhou, Yan · Sun, Huarui

Applied Physics Letters 2025

Advantages

Residual stress an order of magnitude lower than hydrophilic bonding

Thermal boundary resistance significantly decreased at high working temperatures

Amorphous interlayer thickness and thermal boundary resistance tunable by annealing