RuBr₂/Sc₂CO₂ heterostructure

T_C raised to 638 K

Ferroelectric polarization raises the Curie temperature above 638 K while retaining perpendicular magnetic anisotropy, with reversible electrical switching between metallic and semiconducting states.

Shiying, He · Zou, Daifeng · Zhong, Gaokuo

Surfaces and Interfaces 2026

Specifications

Curie temperature

{'zh': '640.3', 'en': '640.3'} K

Curie temperature

{'zh': '638.5', 'en': '638.5'} K

Curie temperature

{'zh': '543.2', 'en': '543.2'} K

Curie temperature

{'zh': '412.8', 'en': '412.8'} K

Advantages

Operates above 400 K

The Curie temperature is raised above 638 K, far exceeding the typical upper limit of 400 K for 2D ferromagnets, enabling device operation at elevated temperatures.

Robust perpendicular anisotropy

All polarizations retain out-of-plane magnetic anisotropy, independent of polarization direction, which is beneficial for stable reading/writing in high-density magnetic storage.

Voltage-controlled metal–insulator switching

Ferroelectric polarization enables non-volatile, reversible switching between metallic and semiconducting states, offering electrical control for multistate memory and logic devices.

Applications

• magnetic memory devices：High Curie temperature and perpendicular anisotropy ensure thermal stability of data at elevated temperatures, enabling direct use in STT-MRAM.
• high-density magnetic storage：Polarization-independent out-of-plane anisotropy is suitable for perpendicular magnetic recording, allowing higher storage density.
• spintronic devices：Curie temperature above 400 K allows spintronic devices to operate at temperatures typical for electronics, expanding the application range of 2D magnetic materials.
• van der Waals heterostructures：This heterostructure system provides a van der Waals platform for studying multiferroicity, magnetoelectric coupling, and electric-field control of magnetism.