Introduces a device figure-of-merit based on a dynamic capacitance model that accurately captures rectification, phase lag, and amplitude attenuation under high-frequency operation, providing a foundation for maximizing output energy.
Guo, Xin · Shilong, Wang · Wei, Di · Zhang, Chi · Dai, Shuge · Ding, Liming · Wang, Zhonglin · Shao, Jiajia
Matter 2026
FOMD combines short-circuit charge, open-circuit voltage, and mechano-induced charge into one formula, enabling fair comparison across devices.
The dynamic capacitance model explains and predicts rectification, phase lag, and amplitude attenuation at high frequencies, avoiding trial-and-error.