Damage-resistant under high-power microwaves
Double heterojunction structure offers higher breakdown voltage and better resistance to high-power microwave damage, with more uniform temperature distribution and lower leakage current compared to single heterojunction.
Ma, Zhenyang · Dexu, Liu · Shun, Yuan · Duan, Zhaobin · Wu, Zhijun
Aerospace 2024
Moderate increase in Al component effectively increases breakdown voltage
Leakage current reduced
Switching characteristics improved
Double heterojunction device has little effect on HPM power damage and high damage resistance
Higher radiation resistance than SiC devices of the same generation