Janus VSeTe monolayer

Reversible spin chirality switching

Biaxial strain reverses the sign of in-plane DMI, enabling reversible spin chirality switching; bilayer stacking independently tunes DMI and polarization.

Linrui, Zhao · An, Yukai

Journal of Alloys and Compounds 2026

Specifications

DMI coefficient

{'zh': '2.472', 'en': '2.472'} meV

Out-of-plane electrical polarization

{'zh': '2.78', 'en': '2.78'} C/m²

Advantages

Reversible spin chirality switching

Biaxial strain reverses the sign of the dominant in-plane DMI, enabling controllable flipping of spin chirality without changing the material.

Independent tuning of polarization and DMI

By choosing stacking configurations, the DMI strength and electrical polarization can be independently tuned while preserving the in-plane MAE.

Cooperative enhancement of Rashba effect

The AB_up-up stacking with parallel interlayer polarization exhibits a cooperative interlayer electrostatic potential that enhances the Rashba effect, yielding a large DMI coefficient.

Out-of-plane polarization

Antiparallel-polarized stackings such as AB_up-dn exhibit sizable out-of-plane polarization due to symmetry breaking, reaching a maximum of 2.78 C/m².

Applications

• Spintronic devices：Exploit tunable DMI and spin chirality to design novel spin logic and memory devices.
• Magnetic topological materials：As a 2D Janus material, it provides a platform to explore magneto-topological coupling.
• Topological spin textures：Strain-controlled DMI sign helps stabilize and manipulate skyrmions and other topological spin textures.
• Non-volatile memory：Reversible spin chirality switching and electrical polarization enable multistate non-volatile information storage.