Undoped Ge/SiGe heterostructure

Long quantum scattering time

Preserves quantum quality despite degraded transport mobility, with semiconductor-compatible fabrication.

Yi-Xin, Li · Kong, Zhenzhen · Shimin, Hou · Wang, Guilei · Huang, Shaoyun

Physical Review B 2023

Specifications

空穴密度

{'zh': '2.25×10¹¹', 'en': ''} cm⁻²

量子散射时间

{'zh': '2.3', 'en': ''} ps

逾渗密度

{'zh': '0.69×10¹¹', 'en': ''} cm⁻²

Advantages

Integer quantum Hall effects observed at ν=1 to 8 at 1.71 K