GaN Power Amplifier

SEB-hardened

Reveals the single-event burnout mechanism in GaN MMIC power amplifiers under LET of 78.1 MeV·cm2/mg, identifying power-stage GaN HEMTs and MIM capacitors as vulnerable points.

Hao, Zhang · Zheng, Xuefeng · Danmei, Lin · Lv, Ling · Cao, Yanrong · Hong, Yue Hua · Zhang, Fang · Wang, Xiaohu · Wang, Yingzhe · Weidong, Zhang · Zhang, J. F. · Ma, Xiaohua · Hao, Yue

Applied Physics Letters 2024

Specifications

线性能量转移

{'zh': '78.1', 'en': ''} MeV·cm2/mg

Advantages

Power-stage GaN HEMT burnout

MIM capacitor burnout