SiNW Memristor

Ultralow switching energy

In-plane solid-liquid-solid grown silicon nanowires with edge-line contacts enable uniform, high-performance switching.

Liu, Zongguang · Wang, Junzhuan · Yu, Linwei

ACS Nano 2025

Specifications

operating voltage

{'zh': '约0.8', 'en': '~0.8'} V

漏电流

{'zh': '1', 'en': ''} pA

switching speed

{'zh': '约8', 'en': '~8'} ns

单次操作能耗

{'zh': '47.2', 'en': ''} fJ

Advantages

switching ratio >10⁷