TMR up to 75%
All-collinear antiferromagnetic tunnel junctions built from a van der Waals A-type antiferromagnetic metal and a 2D semiconductor achieve purely interface-driven spin-polarized tunneling, with performance comparable to ferromagnetic MTJs.
Zhao, Wei · Liu, Yi · Liu, Yang · Cheh Tan, Cheng · Yang, Yuanjun · Zhu, Zhifeng · Chen, Meixia · Rong, Hu · James, Partridge · Wang, Guopeng · Tian, Mingliang · Shao, Dingfu · Wang, Lan
Nature Communications 2025
Achieved in the antiferromagnetic state, not during AFM-FM transition
Volatile or non-volatile TMR selected by even/odd electrode layers
TMR arises from interfacial spin-flipping or Néel vector switching