Non-collinear antiferromagnetic Mn3Sn films

SOT switching up to 100 nm thickness

Deterministic switching of antiferromagnetic order in thick films via spin-orbit torque, with an 83% switching ratio, enabling integration-friendly building blocks for high-density antiferromagnetic spintronics.

Song, Houning · Wang, Dong · Xing, Yuzhi · Wenxiao, Zhao · Qi, Chen · Wei, Lin · Yan, Shishen · Tian, Yuefeng · Bai, Lihui · Chen, Yanxue

Applied Physics Letters 2024

Specifications

薄膜厚度
{'zh': '100', 'en': ''} nm
的电开关比
{'zh': '83', 'en': ''} %

Advantages

Switching mechanism linked to Joule heating near Néel temperature