Bi2SiO5 single-crystal gate dielectric

Polymer-free transfer

Vertically grown ultrathin single crystals combine high dielectric constant (>30) and wide band gap (~3.8 eV), and can be cleanly integrated via mechanical pressing.

Chen, Jiabiao · Zhaochao, Liu · Dong, Xinyue · Gao, Zhansheng · Lin, Yuquan · Yuyu, He · Duan, Yingnan · Zhou, Zhengyang · Fu, Huixia · Luo, Feng · Wu, Jinxiong

Nature Communications 2023

Specifications

band gap

{'zh': '~3.8', 'en': '~3.8'} eV

MoS FET hysteresis

{'zh': '3', 'en': '3'} mV

DIBL

{'zh': '', 'en': '5'} mV/V

Advantages

dielectric constant >30