Si/Ge Heterostructure Nanoparticles

Sharply reduced interfacial thermal resistance

Placing a nanoparticle directly at the Si/Ge interface significantly reduces thermal boundary resistance without degrading bulk thermal conductivity, avoiding the trade-off of bulk resistance increase seen in resonance-based embedding.

Yue, Jincheng · Rongkun, Chen · Ma, Dengke · Hu, Shiqian

Chinese Physics Letters 2025

Advantages

Significant reduction in thermal boundary resistance

Mitigated increase in bulk thermal resistance