h-BN Memristor

41 mV SET voltage

Replacing direct metal deposition with a prefabricated rough electrode laminated onto h-BN, avoiding dielectric damage and random ion diffusion, enabling ultralow-voltage, robust nonvolatile memory.

Yu, Kang · Xingyu, Zhai · Yang, Quan · Hu, Jiayang · Zhang, Zhixiang · Jialei, Miao · Haohan, Chen · Pu, Dong · Hu, Huan · Chen, Wenchao · Zhao, Yuda · Yu, Bin

ACS Materials Letters 2025

Specifications

电压

{'zh': '41', 'en': ''} mV

Advantages

Noninvasive rough metal/dielectric interface

Ultralow operating voltage