W-Gated p-MESFET

Normally-off, high ION/IOFF

An energy band-modulated self-aligned p-AlGaN/u-GaN composite-channel MESFET with a tungsten gate, featuring negligible hysteresis and ultra-low trap state density.

Peng, Wu · Su, Huake · Zhang, Tao · Heyuan, Chen · Xu, Shengrui · Duan, Xiaoling · Lv, Yueguang · Zhang, Jincheng · 74227950

IEEE Transactions on Electron Devices 2024

Specifications

亚阈值摆幅

{'zh': '90', 'en': ''} mV/dec

Threshold voltage

{'zh': '', 'en': '0.3'} V

Breakdown voltage

{'zh': '4', 'en': '365'} V

击穿场强

{'zh': '约 0.9', 'en': ''} MV/cm

微分导通电阻

{'zh': '2.8', 'en': ''} kΩ·mm

Advantages

ION/IOFF of 2 × 10^7

Negligible hysteresis after OFF-state stress