SAM-Gated SWCNT Transistor

Lower coverage, better device

Replacing conventional gate dielectrics with self-assembled monolayers in SWCNT random networks and using low surface coverage achieves an optimal balance of mobility and ION/IOFF, overturning the usual preference for high coverage.

Kiran Iqbal, Khan · Sattar, Abdul · Latif, Hamid · Irfan, Muhammad · Usman, Arslan D. · Hina, Mustafa · Amjad, Raja J. · Alvi, Farah

ACS Applied Electronic Materials 2023

Advantages

CNTFETs with lower surface coverage exhibit significantly improved characteristics compared to high surface coverage devices

The DDT sample with low surface coverage demonstrates an optimal balance between ION/IOFF and mobility

SAMs with longer chain lengths (DDT) and aromatic molecules (BMT) possess higher dielectric constants