AlN/Al₂O₃ bilayer RRAM
23× endurance improvement
Inserted Al₂O₃ thin layer precisely controls conductive filament rupture locations, enabling more stable resistive switching for demanding nonvolatile memory applications.
Jinshan, He · Duan, Xiaoling · Wang, Dong · Jiangcheng, Wu · Liu, Zhihong · Zhang, Tao · 74227950 · Zhang, Jincheng
Applied Physics Letters 2025
Specifications
- Endurance
- {'zh': '2791', 'en': '2791'} cycles
- Maximum on/off ratio
- {'zh': '10⁸', 'en': '10⁸'}
Advantages
23× endurance improvement
The inserted AlO layer enables precise control over conductive filament rupture locations, increasing the number of switching cycles from 122 to 2791.
On/off ratio boosted by three orders
The maximum on/off ratio rises from 10⁵ to 10⁸, providing a larger window that facilitates state distinction and improves read reliability.
More stable switching
Spatial regulation of the filament rupture by the AlO layer yields more stable resistive switching behavior, a critical requirement for nonvolatile memory applications.
Applications
- Nonvolatile memory：Replace existing RRAM cells in nonvolatile memory to improve endurance and on/off ratio.
- Resistive switching memory：Use in resistive switching memory, where the AlO interlayer controls filament rupture locations, enhancing switching stability.
- Micro/nano memory fabrication：The bilayer structure can be fabricated using standard micro/nano fabrication processes and directly integrated into existing memory production lines.
- Embedded memory：Provide embedded memory with more stable and higher on/off ratio RRAM elements, improving system reliability.