Mg-penetration ETL injection

Turn-on voltage down to 2.4 V

Controlled penetration of Mg atoms into the ETL generates defect levels for efficient electron injection, enabling record-low turn-on voltage and negligible efficiency roll-off without doping.

Chen, Jing · Jingjing, Wang · Jun-Hong, Liu · Bo, Wang · Teng, Peng · 73999654 · 73999655 · 77899357 · Zhu, Hongqiang · Yun, Liu · Chen, Qiusong · Chen, Xiaoli · Xiong, Zuhong

Advanced Functional Materials 2025

Specifications

Turn-on voltage
{'zh': '2.4', 'en': '2.4'} V
Turn-on voltage
{'zh': '2.7', 'en': '2.7'} V
Brightness
{'zh': '116611', 'en': '116611'} cd m⁻²
Efficiency roll-off
{'zh': '12.7', 'en': '12.7'} %
Low driving voltage
{'zh': '3', 'en': '3'} V
Low temperature
{'zh': '225', 'en': '225'} K

Advantages

Ultra-low turn-on

Undoped device reaches record-low 2.4 V turn-on, doped device only 2.7 V, enabling lower power consumption and simpler driving.

Negligible roll-off

Efficiency roll-off reduced from 51.8% to 12.7% compared to LiF/Al, with 2.7-fold brightness enhancement, maintaining high efficiency at high driving voltages.

Works at low T & V

Efficient electron injection persists at 3 V and 225 K, overcoming the dependence on electric field and temperature typical of conventional OLEDs.

Replaces LiF/Al electrode

The Mg/Ag electrode can directly replace the commonly used LiF/Al electrode without doping, simplifying device structure while improving injection.

Applications