Turn-on voltage down to 2.4 V
Controlled penetration of Mg atoms into the ETL generates defect levels for efficient electron injection, enabling record-low turn-on voltage and negligible efficiency roll-off without doping.
Chen, Jing · Jingjing, Wang · Jun-Hong, Liu · Bo, Wang · Teng, Peng · 73999654 · 73999655 · 77899357 · Zhu, Hongqiang · Yun, Liu · Chen, Qiusong · Chen, Xiaoli · Xiong, Zuhong
Advanced Functional Materials 2025
Undoped device reaches record-low 2.4 V turn-on, doped device only 2.7 V, enabling lower power consumption and simpler driving.
Efficiency roll-off reduced from 51.8% to 12.7% compared to LiF/Al, with 2.7-fold brightness enhancement, maintaining high efficiency at high driving voltages.
Efficient electron injection persists at 3 V and 225 K, overcoming the dependence on electric field and temperature typical of conventional OLEDs.
The Mg/Ag electrode can directly replace the commonly used LiF/Al electrode without doping, simplifying device structure while improving injection.