300 mm Czochralski Silicon Ingot

Ultra-low O & defects

Precisely controls melt convection via vertical field asymmetry, synergistically suppressing oxygen and defects for high-quality 300 mm wafers.

Haojun, Hu · Siqing, Shen · He, Zirui · Yongli, Liang · Hao, Hu · Gao, S. P. · Chen, Meng

Materials Science in Semiconductor Processing 2026

Specifications

Oxygen concentration

{'zh': '5', 'en': '5'} ppma

Melt-solid interface center-to-edge deflection

{'zh': '12', 'en': '12'} mm

Advantages

Oxygen below 5 ppma

Optimized vertical field asymmetry (MR=1:1.25) restructures convection vortices, precisely regulating oxygen transport to maintain concentration below 5 ppma over an extended axial window.

Interface flattening

Vertical field asymmetry changes the melt-solid interface center-to-edge deflection from −42 mm to 12 mm, improving interface shape and defect formation.

Lower COP density

Under favorable vertical field asymmetry, crystal-originated particle (COP) density is significantly lowered, confirmed by surface scanning inspection system defect maps.

Applications

• Large-diameter silicon wafers：Supplies ultra-low oxygen and low-defect ingots for 300 mm wafers.
• Semiconductor device fabrication：Improved crystal quality enhances device performance and reliability.
• IC substrates：Low COP density benefits IC substrate quality.
• Crystal growth equipment：Validates the vertical asymmetric magnetic field configuration for growth equipment.