SmOBr quasi-vdW dielectric

High-κ ultralow hysteresis

Combines wide band gap, high breakdown field, and low leakage for nearly hysteresis-free gating of 2D transistors.

Hong, Wenting · Jiashuai, Yuan · He, Xu · Liu, Yubo · Ju, Qiankun · Cai, Qian · Jian, Chuanyong · Liu, Wei

ACS Nano 2026

Specifications

带隙

{'zh': '4.63', 'en': ''} eV

Breakdown field

{'zh': '>11.9', 'en': '>11.9'} MV·cm⁻¹

亚阈值摆幅

{'zh': '79.5', 'en': ''} mV dec⁻¹

Gate hysteresis

{'zh': '~4.3', 'en': '~4.3'} mV

Advantages

Dielectric constant ε ≈ 13.1

Leakage current <10⁻⁶ μA μm⁻²