Catalytic Si Nanowire Channel

Off-current down to 1 pA

Gate-all-around FETs built on ordered catalytic Si nanowire channels achieve performance comparable to state-of-the-art EUV-lithography GAA-FETs, without needing EBL or EUV.

Qian, Wentao · Liang, Lei · Wang, Junzhuan · Yu, Linwei

Nano-Micro Letters 2025

Specifications

亚阈值摆幅

{'zh': '66', 'en': ''} mV dec

Nanowire diameter

{'zh': '', 'en': '2.4'} nm

线间距

{'zh': '90', 'en': ''} nm

Advantages

On/off current ratio 10^7