Al:HfO₂ Ferroelectric MoS₂ Transistor

Nonvolatile Full Depletion

Al-doped HfO₂ nanofilm passivates traps and suppresses Coulomb scattering, while its switchable remanent polarization induces a nonvolatile electrostatic field that fully depletes the monolayer MoS₂ channel.

Meng, Guodong · She, Junyi · Yu, Hao · Li, Qiang · Liu, Xin · Yin, Zongyou · Cheng, Yonghong

ACS Applied Materials & Interfaces 2024

Specifications

探测率

{'zh': '2.05 × 10¹¹', 'en': ''} Jones

栅介质层厚度

{'zh': '10.2', 'en': ''} nm

Advantages

Photocurrent on/off ratio > 10⁴ nm⁻¹

Monolayer MoS₂ (CVD-grown)