Gd-doped In2O3 Nanofibers

Low-voltage high on/off

Gadolinium-doped indium oxide nanofibers fabricated by electrostatic combustion spinning achieve near-ideal threshold voltage and excellent bias stress stability for low-cost, high-performance thin-film transistors.

Bo, Deng · Haoxuan, Xu · Rui, Wang · Xiao, Shuang · Xue, Bin · Zhang, Xin'An

Materials Science in Semiconductor Processing 2026

Specifications

Threshold voltage

{'zh': '0.6', 'en': '0.6'} V

Carrier mobility

{'zh': '2.6', 'en': '2.6'} cm² V⁻¹ s⁻¹

Optimal doping concentration

{'zh': '7', 'en': '7'} mol%

Advantages

Near-ideal threshold voltage

Gd doping combined with PVA-assisted Al2O3 gate insulator shifts the threshold voltage to 0.6 V, enabling low-voltage operation.

Lower annealing temperature

The electrostatic combustion spinning strategy effectively reduces the annealing temperature, thus lowering production costs for scalable fabrication.

Excellent bias stress stability

Positive bias stress tests verify excellent operational reliability, suitable for long-term electronic applications.

Applications

• Thin-film transistors：Serve as channel material for low-power, high on/off ratio TFTs.
• Flexible electronics：Nanofiber network is bendable, suitable for TFTs on flexible substrates.
• Sensor arrays：High on/off ratio and stability aid reliable sensor arrays.
• Logic circuits：Near-ideal threshold voltage simplifies logic circuit driving.
• Display backplanes：Low annealing temperature and high performance can be compatible with display backplane fabrication.