Wide-range twist-angle bilayer MoS₂

Optimal carrier mobility near 30°

Hydrogen-driven kinetic modulation enables controllable twist angles from 0° to 120°, with near-30° Moiré superlattices weakening interlayer coupling and enhancing charge transport.

Chen, Jian · Yang, Yueting · Zhang, Hua · Chen, Zhihui · Zhu, Jian · Sun, Jian · Liu, Song

ACS Nano 2026

Specifications

Twist angle range

{'zh': '0–120', 'en': '0–120'} °

Advantages

Wide-range twist angles

Hydrogen-perturbation-assisted CVD enables scalable regulation of twist angles from 0° to 120°, including incommensurate orientations beyond thermodynamically preferred 0° and 60°.

Peak mobility near 30°

Devices with near-30° twist angles show quasi-Ohmic behavior and superior carrier mobilities compared to 0° and 60° counterparts, attributed to weakened interlayer coupling and minimized scattering.

Scalable synthesis

The hydrogen-perturbation-assisted CVD strategy is scalable and probabilistic, enabling high-yield growth of TB-MoS₂ with incommensurate twist angles.

Applications

• 2D material electronic devices：Leverage twist-angle engineering to tune electronic band structures and transport properties for enhanced device performance.
• Moiré superlattice quantum devices：Provide a controllable twist-angle Moiré superlattice platform for exploring strongly correlated physics and quantum phenomena.
• atomically thin transistors：Near-30° twist angles reduce interlayer scattering and enhance carrier mobility, benefiting transistor performance.
• van der Waals heterostructure devices：Serve as building blocks in van der Waals heterostructures, with twist-angle-controlled interlayer coupling for novel device designs.