ALD-ZnO Thin-Film Transistor

Mobility 85 cm²/V·s

An atomic layer deposited ZnO thin-film transistor with record field-effect mobility, processable at low temperatures below the copper interconnect thermal budget, suitable for monolithic 3D integration in the CMOS back-end-of-line.

Wang, Wenhui · Li, Ke · Lan, Jun · Shen, Mei · Wang, Zhongrui · Feng, Xuewei · Yu, Hongyu · Chen, Kai · Li, Jiamin · Zhou, Feichi · Lin, Longyang · Li, Yida

Nature Communications 2023

Specifications

mobility intrinsic mobility

{'zh': '', 'en': '140'} cm²/V·s

in a kbit

{'zh': '1', 'en': '1'} T1R array

级环形振荡器工作频率

{'zh': '10', 'en': ''} MHz