Crack-free wafer thinning
Synergistic diamond/CeO₂ abrasives achieve atomically smooth surfaces without subsurface cracks during SiC wafer backside thinning.
Luo, Qiufa · Gu, Li · Jieming, Chen · Lu, Jing · Ke, Congming · Hu, Guangqiu · Jianhui, Zhu · Huang, Hui
Wear 2026
A smooth SiC surface with a roughness of 0.76 nm was obtained at 1000 rpm and 0.3 mm/min feed rate
No cracks were detected on the subsurface