Enhanced resilience in high-intensity radiated fields
This p-GaN HEMT, with optimized gate length, slows temperature rise and delays breakdown under high-intensity radiated fields, offering better electromagnetic protection for aerospace electronic systems.
Ma, Zhenyang · Dexu, Liu · Duan, Zhaobin · Yicheng, Li · Jiahao, Liu · Meng, Xie
IEEE Sensors Journal 2024
Longer p-GaN length results in longer breakdown time
Sparser electric field distribution
Time from sharp temperature accumulation to breakdown accounts for 1/4 of total lifetime