PtSe₂ Phase-Transition Doping Layer

33× Longer Lifetime

Ar plasma-induced phase transition of PtSe₂ from intrinsic semiconductor to metallic phase enables controlled doping with 100 nm resolution, precisely modulating the lateral electric field in transistors to reduce channel self-heating and suppress short-channel effects.

Jialei, Miao · Liang, Tian · Zhang, Heng · Wu, Yuyang · Wu, Shaoxiong · Xiaolei, Ding · Che, Renchao · Hu, Huan · Xu, Yang · Yu, Bin · Dianyu, Qi · Liu, Zheng · Chen, Wenchao · Chai, Yang · Zhao, Yuda

ACS Nano 2025

Specifications

at Vd

{'zh': '245.5', 'en': '1'} V

接触电阻

{'zh': '264', 'en': ''} Ω·μm

寿命比欧姆接触晶体管长

{'zh': '33', 'en': ''} 倍

掺杂空间分辨率

{'zh': '100', 'en': ''} nm