NiO/β-Ga₂O₃ Heterojunction FinFET

Enhancement-mode

This FinFET uses a NiO/β-Ga₂O₃ heterojunction gate to achieve enhancement-mode operation without the need for an additional dielectric layer.

Yu, Jiangang · Ziwei, Li · Fengchao, Li · Qiu, Haibing · Li, Tengteng · Lei, Cheng · Liang, Ting

Crystals 2025

Specifications

正向阈值电压

{'zh': '2.14', 'en': ''} V

仿真击穿电压

{'zh': '2650', 'en': ''} V

比导通电阻

{'zh': '2.48', 'en': ''} mΩ·cm²

功率优值

{'zh': '2840', 'en': ''} MW/cm²