Twisted FeI₂/α-In₂Se₃ Heterostructure

Field-switchable half-metallicity

Electric-field-controlled ferroelectric polarization enables reversible semiconductor-to-half-metal transitions in twisted FeI₂ bilayers, offering a new route to ultrahigh-density nonvolatile memory.

Zhijian, He · Guoan, Ding · Zou, Daifeng · Lei, Chihou · Xie, Shuhong · Liu, Yunya

Applied Physics Letters 2025

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Switching α-In₂Se₃ polarization triggers semiconductor-to-half-metal transition in bi-FeI₂

Exhibits electrically tunable four resistance states