Radiation-hard
AlGaN/GaN HEMTs for space applications exhibit bias-dependent single-event effects, providing insights for radiation-hardening design.
Lv, Ling · Changjuan, Guo · Mu-Han, Xing · Zheng, Xuefeng · Cao, Yanrong · Hu, Peipei · Liu, Jie · Ma, Xiaohua · 74227950
IEEE Transactions on Electron Devices 2025
Heavy ion radiation causes the most serious damage under OFF-state
Three regions of nondestructive, leakage degradation, and catastrophic failures observed with increasing drain-to-source voltage
Peak electric field is largest under OFF-state
Current collection is more significant at high-voltage bias