Step-Necked Silicon Nanowire

Short Channel, Strong Gate

This silicon nanowire, featuring a short necking segment formed via curvature-modulated catalytic growth, simultaneously achieves short channel length and high on/off current ratio.

Lei, Wu · Liang, Lei · Hu, Ruijin · Wang, Junzhuan · Yu, Linwei

Nature Communications 2025

Specifications

Necking segment length

{'zh': '<100', 'en': '<100'} nm

Diameter reduced

{'zh': '约45', 'en': '~45'} nm

亚阈值摆幅

{'zh': '70', 'en': ''} mV/dec

Advantages

On/off current ratio >8×10^7