2D NbIrTe₄ Weyl semimetal

Tunable carrier type

Few-layer NbIrTe₄ exhibits a temperature-driven carrier-type transition from holes to electrons at 155 K, providing key transport insights for 2D Weyl semimetal device applications.

Ze-Hao, Yu · Jie, Zhang · Meilin, Li · Lin, Fanrong · Liu, Yanpeng · Yu, Peng · Zhang, Lifa · Li, Xiao · Zhao, Yunshan

Nano Energy 2026

Specifications

系数

{'zh': '12.8', 'en': ''} μV/K

Seebeck coefficient

{'zh': '9.5', 'en': '9.5'} μV/K

Advantages

Carrier-type transition at 155 K

Electrical conductivity increases significantly with decreasing thickness