Topological Insulator-Driven Magnetic Memory

Field-Free Perpendicular Writing

Harnesses the giant spin-orbit torque of topological insulators to achieve room-temperature perpendicular magnetization switching without an external field, offering a low-power, high-density magnetic memory solution.

Cui, Baoshan · Chen, Aitian · Fang, Bin · Zhang, Peng · Yu, Guoqiang · Yan, Peng · Han, Xiufeng · Wang, Kang L. · Zhang, Xixiang · Wu, Hao

Advanced Materials 2023

Specifications

with retention time

{'zh': '', 'en': '> 10'} years

Advantages

Ultralow switching current density of 1.5 × 10⁵ A cm⁻² at room temperature

High spin Hall angle θSH = 1.16

1–2 orders of magnitude lower than conventional heavy-metal systems