PEALD IGZO Thin-Film Transistor

High mobility, low temp

IGZO transistors fabricated via plasma-enhanced atomic layer deposition exhibit ultrahigh mobility and minimal threshold voltage drift, enabling high-performance monolithic 3D integration.

Wang, Wenhui · Zhang, Tao · Lan, Jun · Zhixiong, Li · Wu, Yongle · Feng, Xuewei · Lin, Longyang · Zhou, Feichi · Panpan, Zhang · Li, Yida

Advanced Science 2025

Specifications

场效应迁移率最高

{'zh': '116.35', 'en': ''} cm2 V-1·s-1

Threshold voltage shift

{'zh': '0.15', 'en': '< 0.15'} V

Mobility variation

{'zh': '2', 'en': '< 2'} %

节点环形振荡器频率可

{'zh': '240', 'en': ''} MHz