He-implanted Cu anti-oxidation layer

Resists thermal cycling oxidation

Helium ion implantation introduces lattice defects that greatly enhance oxide scale adhesion to the copper substrate, thereby suppressing oxide growth during thermal cycling at 200 °C.

Cheng-Yu, Jia · Zhang, Shenghua · Jie, Cheng · Yang, Subing · Luo, Rui · Xiaonong, Cheng

Corrosion Science 2026

Specifications

Cyclic oxidation temperature

{'zh': '200', 'en': '200'} °C

Advantages

Oxide growth suppressed

During cyclic oxidation at 200 °C, oxide scale growth on He+-implanted Cu was suppressed compared with that on nonimplanted Cu.

Stronger scale adhesion

The lattice defects increase the density at the oxide/Cu interface by restraining the accumulation of cavities and providing diffusion pathways, and increase roughness for mechanical anchoring.

Denser interface

The oxide/Cu interface of He+-implanted Cu was more compact and crystalline than that of nonimplanted Cu.

Applications

• Advanced electronic packaging：He implantation protects Cu interconnects from oxidation during thermal cycling in packaging.
• Thermal management components：Treated Cu surfaces resist oxidation, preserving thermal conductivity in heat management parts.
• High-temperature protective coatings：Provides oxidation protection for Cu at elevated temperatures, replacing conventional coatings.