p-GaN/AlGaN/GaN Temperature Sensor

19.7 mV/°C sensitivity

Consisting of a series-connected 2DEG resistor and PiN diode, it exploits their opposing temperature dependencies for voltage redistribution, achieving a record sensitivity of 19.7 mV/°C over 25–300 °C.

Jie, Chang · Yulian, Yin · Jiahong, Du · Wang, Huan · Haoran, Li · Changhui, Zhao · Li, Hui · Cungang, Hu · Cao, Wenping · Tang, Xi · Yang, Shu

IEEE Electron Device Letters 2023

Specifications

温度范围内灵敏度

{'zh': '19.7', 'en': ''} mV/°C

工作电压

{'zh': '10', 'en': ''} V

Advantages

Fabrication process fully compatible with HEMTs