High-Mobility Germanium Films

RT mobility near 2000

Ge films directly grown on Si substrates achieve strain relaxation via interfacial dislocations, trading low threading dislocation density for ultrahigh room-temperature carrier mobility.

Jieyin, Zhang · Li, Ming · Liangxin, Liao · Xin, Geng · Zhang, Xinding · Zhang, Jianjun

Nanomaterials 2026

Specifications

室温霍尔迁移率高

{'zh': '1916', 'en': ''} cm²V⁻¹s⁻¹

载流子浓度

{'zh': '1.425 × 10¹⁶', 'en': ''} cm⁻³

表面粗糙度

{'zh': '0.187', 'en': ''} nm

穿透位错密度仅

{'zh': '1.2 × 10⁷', 'en': ''} cm⁻²